EDF/CNRS offers a range of techniques for characterising and mapping electrical performance and defects by luminescence
These techniques allow local electrical properties to be obtained and defects to be mapped. They use the phenomenon of luminescence, do not degrade the sample, can be performed at different stages of manufacturing and are suitable for a wide range of semiconductors.
They are spatially (10×10 cm²), temporally (10 ps –> 1 ns) and spectrally resolved in a repeatable manner.
Software for data analysis and processing has been specifically developed.
