- Function: Research engineer
- Working Place: Palaiseau, 91120 (Paris area)
- Starting Date: Summer 2020
- Time: 18 or 36 months
- Contact: firstname.lastname@example.org
- Salary: Profile dependent
- Contract type:Post-doctoral contract
- Education: PhD in physics or chemistry
The “Institut Photovoltaïque d’Île-de-France” IPVF aims at becoming one of the main global research, innovation and education center in the field of photovoltaic solar energy. Composed with international well-known industrials, leading in PV industry (EDF, Total, Air Liquide, Horiba and Riber) and academic research teams (CNRS, École Polytechnique), IPVF wants to increase performances and competitiveness of PV solar cells and develop new breakthrough technologies thanks to:
- A research program : 5 programs and 12 projects
- Experimental laboratories open to PV actors: more than 80 state-of-the-art tools, in a dedicated IPVF building
- Education program with a master and PhD students
As part of its tandem cell program, IPVF is studying the construction of tandem cells combining a silicon back cell and a CIGS front cell. This innovative approach has the advantage of combining two established technologies, silicon technology and thin film technology, but which are currently used in monojunction form. The chosen approach is to directly develop the CIGS cell on the silicon cell, also serving as a growth substrate. The goal is to achieve tandem cells with more than 30% efficiency. For this it is necessary that the two cells have a yield of around 20% monojunction.
The CIGS cells are deposited in one or several stages by coevaporation or annealing of metal layers previously deposited under a sulfur or selenium atmosphere. The silicon substrate is functionalized to optimize the growth of CIGS epitaxially (which increases the optoelectronic quality) and to allow ohmic electrical contact during tandem operation. Tandem devices will be elaborated with operating silicon bottom cells from main stream technologies completed by inserting a tunnel junction. The forecasted device structure will be p+ contact/p type Si/ n type Si/ tunnel junction n+p+/ P type CIGS/n type buffer layer/ n type ZnO.
An in-depth study of the properties of materials, interfaces and devices will aim at understanding and optimizing photovoltaic performances.
- Physics of semiconductors
- Material science
- Process of elaboration of thin films
- Experience in photovoltaics or optoelectronics
The candidate will have to demonstrate autonomy, initiative and ability to integrate into the existing research group