Maximum Sample Size: 15.7 x 15.7 cm² (1 standard wafer)
Maximum Sample Height: 1 mm
All types of materials
Manufacturer: Freiberg Instruments
Other: Adapted for traditional busbar contacts. Other geometries may be discussed before investigation.
Reliability and quality issues are critical on the path towards industrial applications for solar cells or other electronic components. Potential Induced Degradation (PID) predicts the expected drop in performance of systems before they are operated (e.g. for solar cells, at high voltages and/or in humid environments). It also gives precious information on the encapsulation quality and the defect mechanisms at stake in a sample.
The setup stresses the sample at high temperature and high voltage (typ. 85°C, 1000V) and measures the shunt conductance of the sample as a function of transferred charge (which can be directly interpreted as the shunt resistance variation with the accumulated stress). It evaluates the degradation rate as the maximum slope of the previous curve and gives a PID sensitivity indicator that can serve to benchmark samples, encapsulants, or manufacturing processes according to their performances.
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